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UM6030
P/N MOS half-bridge three-phase output; maximum operating voltage of 40 V; compatible with 3.3 V / 5 V / 15 V input logic; dV/dt tolerance up to ±50 V/ns; P/NMOS |VGS| up to 10 V; built-in LDO of 5 V / 40 mA; over-temperature protection: gate drive voltage of 5–40 V; RoSH compliant; QFN16
Dead time: 130 ns
Turn-on transmission delay: ton = 80 ns; turn-off transmission delay: toff = 30 ns; delay matching on both high and low sides
Undervoltage lockout of 4.5 V positive threshold and 4.3 V negative threshold
Sourcing current: 50 mA
Sinking current: 300 mA
Operating temperature: -40–125°C
ESD: ±2 kV (HBM)
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